VSMB10940 www.vishay.com vishay semiconductors rev. 1.1, 02-may-13 1 document number: 84170 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 940 nm, gaalas, mqw description VSMB10940 is an infrared, 940 nm side looking emitting diode in gaalas multi quantum well (mqw) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (smd). features ? package type: surface mount ? package form: side view ? dimensions (l x w x h in mm): 3 x 2 x 1 ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? high speed ? angle of half sensitivity: ? = 75 ? low forward voltage ? package matches with detector vemd10940f ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free re flow soldering ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? ir touch panel ? high power emitter for low space applications ? high performance transmissi ve or reflective sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i e (mw/sr), 20 ma ? (deg) ? p (nm) t r (ns) VSMB10940 1 75 940 15 ordering information ordering code packaging remarks package form VSMB10940 tape and reel moq: 3000 pcs, 3000 pcs/reel side view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 65 ma peak forward current t p /t = 0.5, t p = 100 s i fm 130 ma surge forward current t p = 100 s i fsm 500 ma power di ssipation p v 104 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature accordi ng to fig. 9, j-std-020 t sd 260 c thermal resistance junction/ambient j- std-051, leads 7 mm, soldered on pcb r thja 450 k/w
VSMB10940 www.vishay.com vishay semiconductors rev. 1.1, 02-may-13 2 document number: 84170 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature t amb - ambient temperature (c) p v - power dissipation (mw) 0 20 40 60 80 100 120 0 102030405060708090100 r thja = 450 k/w t amb - ambient temperature (c) i f - forward current (ma) 0 10 30 40 50 60 70 0 20 40 60 80 100 20 r thja = 450 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 20 ma, t p = 20 ms v f 1.1 1.3 1.5 v i f = 65 ma, t p = 20 ms v f 1.35 v i f = 500 ma, t p = 100 s v f 1.8 v temperature coefficient of v f i f = 1 ma tk vf - 1.5 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 21 pf radiant intensity i f = 20 ma, t p = 20 ms i e 0.5 1 1.5 mw/sr i f = 65 ma, t p = 20 ms i e 3.05 mw/sr i f = 500 ma, t p = 100 s i e 13 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e35mw temperature coefficient of radiant power i f = 100 ma tk ? e - 0.47 %/k angle of half inte nsity - horizontal ? h 77.5 deg angle of half intensity - vertical ? v 72.5 deg peak wavelength i f = 30 ma ? p 940 nm spectral bandwidth i f = 30 ma ?? 25 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.3 nm rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns
VSMB10940 www.vishay.com vishay semiconductors rev. 1.1, 02-may-13 3 document number: 84170 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radiant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 0.001 0.01 0.1 1 0.5 1.9 t p = 100 s v f - forward voltage (v) i f - forward current (a) 1.7 1.5 1.3 1.1 0.9 0.7 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 0.01 0.1 1 10 1000 0.001 0.01 0.1 1 i f - forward current (a) i e - radiant intensity (mw/sr) t p = 100 s 100 60 80 100 120 160 - 60 - 40 60 100 t amb - ambient temperature (c) i e, rel - relative radiant intensity (%) i f = 100 ma 140 40 20 0 - 20 80 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 i e, rel - relative radiant intensity 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement horizontal vertical
VSMB10940 www.vishay.com vishay semiconductors rev. 1.1, 02-may-13 4 document number: 84170 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reflow solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and re moving from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 3 floor life: 168 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters 22701 recommen d e d s ol d er pa d footprint
VSMB10940 www.vishay.com vishay semiconductors rev. 1.1, 02-may-13 5 document number: 84170 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 blister tape dimensions in millimeters reel dimensions in millimeters 22667 22668
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